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MUBW10-06A6K
Brake Chopper T7
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
600
±20
±30
11
8
50
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 10 A; V GE = 15 V
I C = 0.2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
4.5
2.65
3.1
0.7
3.3
6.5
0.1
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V CE = 0 V; V GE = ±20 V
V CE = 25 V; V GE = 0 V; F = 1 MHZ
V CE = 300 V; V GE = 15 V; I C = 6 A
220
32
120
nA
PF
nC
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 300 V; I C = 6 A
V GE = ±15 V; R G = 54 W
T VJ = 125°C
20
10
110
30
0.21
0.26
ns
ns
ns
ns
mJ
mJ
I CM
reverse bias safe operating area
RBSOA; V GE = ±15 V; R G = 54 W
L = 100 μH; CLAMPED INDUCT. LOAD T VJ = 125°C
V CEMAX = V CES - L S · di/dt
18
A
t SC
(SCSOA)
R thJC
R thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
V CE = 600 V; V GE = ±15 V;
R G = 54 W ; NON-REPETITIVE
(PER IGBT)
(PER IGBT)
T VJ = 125°C
10
0.9
2.75
μs
K/W
K/W
Brake Chopper D7
Ratings
Symbol
V RRM
I F25
I F80
V F
I R
I RM
t rr
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
max. reverse recovery current
reverse recovery time
Conditions
I F = 10 A; V GE = 0 V
V R = V RRM
V R = 100 V; I F = 12 A
di F /dt = -100 A/μs
T VJ = 150°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 125°C
T VJ = 100°C
min.
typ.
1.25
0.2
3.5
80
max.
600
21
14
2.1
0.06
Unit
V
A
A
V
V
mA
mA
A
ns
R thJC
R thCH
thermal resistance junction to case
thermal resistance case to heatsink
(PER DIODE)
(PER DIODE)
0.85
2.5
K/W
K/W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090929b
3-5
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